DXTA13 discrete semiconductors r dc components co., ltd. technical specifications of npn darlington transistor pinning 1 = base 2 = collector 3 = emitter description designed for applications requiring extremely high current gain. sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo 30 v collector-emitter voltage vces 30 v emitter-base voltage vebo 10 v collector current ic 300 ma total power dissipation pd 1 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 30 - - v ic=100ma, ie=0 collector-emitter breakdown voltage bvces 30 - - v ic=100ma, ib=0 emitter-base breakdown volatge bvebo 10 - - v ie=10ma, ic=0 collector cutoff current icbo - - 100 na vcb =30v, ie=0 emitter cutoff current iebo - - 100 na veb =10v, ic=0 collector-emitter saturation voltage (1) vce(sat) - - 1.5 v ic=100ma, ib=0.1ma base-emitter on voltage (1) vbe(on) - - 2 v ic=100ma, vce=5v dc current gain(1) hfe1 5k - - - ic=10ma, vce=5v hfe2 10k - - - ic=100ma, vce=5v transition frequency ft 125 - - mhz vce =5v, f=100mhz, ic=10ma electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
|
